龚敏
发布时间:2024.09.23
来源:
龚敏,男,博士,教授,博士生导师。
Email:mgong@scu.edu.cn
教育背景
香港大学 1999年获哲学博士学位
工作经历
1984-今 四川大学物理学院微电子学系教师。
人才培养
主讲本科生课程:《微电子器件原理》。
专业方向:微电子技术
研究领域
1、宽禁带半导体材料与器件
2、半导体器件
3、半导体材料新效应及应用
代表性论文(2023 至今)
1. Multivariate Estimation of Cardiac Output Using Photoplethysmography,2023 IEEE 16th International Conference on Electronic Measurement & Instruments (ICEMI)
2. Read-out circuit design of the X-ray detector,EEIE 2023, Proceedings of SPIE 12983 , pp.129830U
3. A Snapback-Free and High-Performance Trench Gate Reverse-Conducting SOI-LIGBT With Self-Adaptive nMOS, IEEE TRANSACTIONS ON ELECTRON DEVICES,71 (4) , pp.2517-2523
4. Recovery at room temperature annealing on 4H-SiC SBDs by gamma irradiation,MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,Jun 15 2024
5. Comparing the effect between room temperature and low temperature heavy ion irradiation by deep level transient spectroscopy,NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, May 2024
6. Effects of low fluence 212 MeV Ge swift heavy ion irradiation on the structural and optical properties of 8-Ga2O3 epitaxial layers,JOURNAL OF ALLOYS AND COMPOUNDS,May 5 2024
7. A novel double RESURF SOI-LIGBT with dynamic avalanche immunity and low losses,SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Mar 1 2023
8. Design of the Main Control RISC-V Processor in Chiplet Applications, 2023 IEEE 5th International Conference on Civil Aviation Safety and Information Technology (ICCASIT)
9. Influence of annealing treatment on performance of 4H-SiC SBD irradiated by heavy ions under room temperature and low temperature,MICRO AND NANOSTRUCTURES,Oct 2024
10. Electrical characterization and temperature reliability of 4H-SiC Schottky barrier diodes after Electron radiation,MICROELECTRONICS RELIABILITY,Feb 2023
招生信息
一、研究生招生专业方向:
1、微电子学与固体电子学
2、凝聚态物理——新型半导体材料与器件等
二、招生要求:申请硕士生或直博生,本科微电子、物理、电子等相关专业就读。
三、本科生科研指导:每年接收符合修课要求的微电子和物理学专业在读本科生参与科研项目。