向钢，教授、博士生导师。兰州大学物理学学士（1998）、材料学硕士（2001），美国宾夕法尼亚州立大学物理学博士（2006）。长期致力于凝聚态物理研究及新奇量子材料与器件研发，包括前沿半导体和低维磁性材料的可控生长制备、相关微纳电子和自旋电子器件的设计制造及其基本物理性能的研究等。研究工作受到国家重点研发计划、国家自然科学基金和教育部新世纪优秀人才计划等16项纵向和横向经费支持。已发表SCI论文100余篇，H因子28；申请国家发明专利12项，其中获批8项、转化1项；研究工作曾获2020年首届“中国半导体十大研究进展”提名奖。主编的《热学》教材入选科学出版社普通高等教育“十三五”和“十四五”规划教材，主讲的热学（试验班）课程获评为四川省高阶课程。入选教育部新世纪优秀人才、四川省学术与技术带头人和四川省高层次人才，获四川省青年科技奖和唐立新教学名师奖。曾任教育部“英才计划”导师、四川省科技扶贫专家组成员、四川省侨联特聘专家、以及物理学院教职工篮球队创队队长兼教练等。

Gang Xiang, Ph.D (2006), Pennsylvania State University; B.S. (1998)/M. S. (2001), Lanzhou University.

Professor  of College of Physics at Sichuan University.

1.半导体自旋电子材料的设计、制备与物性研究

2.高质量半导体晶体材料及器件的制备与物性研究

3.磁电功能材料及其器件的设计、制备与物性研究

半导体物理/磁学/微纳电子与自旋电子器件物理。

凝聚态物理和微电子科学与技术方向的学术博硕士生和工程博硕士生。

1. Design, fabrication and physical properties of spintronic semiconductors

2. Fabrication and physical properties of high-quality semiconductor crystals & devices

3. Design, fabrication and physical properties of electro-magnetic materials & devices

1.Chen, X., Zhang, X., He, W., Li, Y., Lu, J., Yang, D.,Li, D., Lei, L.,Peng,Y.& Xiang, G. Lattice Dynamics and Phonon Dispersion of the van der Waals Layered Ferromagnet Fe3GaTe2. Nano Letters 25,4353(2025).

2.Chen, X., Luo, Q. Y., Guo, P. J., Zhou, H. J., Hu, Q. C., Wu, H. P.,Shen, X.W., Cui, R. Y., Dong, L., Wei, T.X.,Xiao, Y.H., Li, D., Lei,L., Zhang,X.,Wang, J.F.& Xiang, G. Quantum Sensing of Room‐Temperature Ferromagnetism in 2D Van der Waals Fe3GaTe2 Using Divacancy Spins in SiC. Advanced Functional Materials 35,2413529（2025).

3.Yang, Z., Zhang, X., Deng, T., & Xiang, G. Nontoxic Flexible TENG with Robust Piezoelectric Enhancement through Graphitic Carbon Nitride-incorporated PVDF for Wearable Sensors and Power Supplies. Energy 306,132555(2024).

4.Luo, J., Zhang, X., Lan, M., & Xiang, G. Half-metal Mn2GeI2 Monolayer with High Curie Temperature and Large Perpendicular Magnetic Anisotropy. Applied Physics Letters 124,192405 (2024).

5.Lan, M., Wang, R., Wei, S., Li, L., Ren, W., Zhang, Xing, Zhang, X. & Xiang, G. Elongated Antiferromagnetic Skyrmion in Two-dimensional RuF4. Science China Materials 67,3282（2024).

6.Dai, X., Zhang, X., Gong, D., & Xiang, G. Performance Enhancement and In Situ Observation of Resistive Switching and Magnetic Modulation by a Tunable Two‐Level System of Mn Dopants in a-Gallium Oxide-based Memristor. Advanced Functional Materials 33,2304749(2023).

7.Zhong, J., Zhang, X., & Xiang, G.Scalable Fabrication of High-Performance Self-Powered a-MoSe2 Thin-Film-Based Photodetectors on a-SiO2/Si Substrates. ACS Applied Materials & Interfaces 15,56049(2023).

8.Yang, Z., Zhang, X., Deng, T., & Xiang, G. Mechanically Robust and Electrically Stable High-performance Triboelectric Nanogenerator Based on Fluffy-free EC/Nylon-11 and PTFE/PVDF Nanofibers. ACS Applied Materials & Interfaces 15,52696(2023).

9.Dai, X., Zhang, X., & Xiang, G. Mechanism-based Tuning of Room-temperature Ferromagnetism in Mn-doped β-Ga2O3 by Annealing Atmosphere. Journal of the American Ceramic Society 106, 374(2023).

10.Li, J., Zhang, X., Wang, X., Wang, X., & Xiang, G. Spark Plasma Sintering-assisted Synthesis and High-Tc Ferromagnetism of Mn-doped SiGe Alloys. Scripta Materialia 218,114802(2022).

11.Shen, L., Zhang, X., Wang, J., Wang, J., Li, C., & Xiang, G. Mn-doped SiGeThin Films Grown by UHV/CVD with Room-temperature Ferromagnetism and High Hole Mobility.Science China Materials 65,2826(2022).

12.Feng, Y., Zhang, X., Zhao, G., & Xiang, G.  A Skyrmion Diode Based on Skyrmion Hall Effect. IEEE Transactions on Electron Devices 69, 1293(2022).

13.Lu, J. , Zhou, W. , Zhang, X. , & Xiang, G. Electronic Structures and Lattice Dynamics of Layered BiOCl Single Crystals. The Journal of Physical Chemistry Letters 11,1038(2020).

14.Ren, H., Zhang, L., & Xiang, G. Web buckle-mediated Room-temperature Ferromagnetism in Strained MoS2 Thin Films. Applied Physics Letters 116, 012401(2020).

15.Wang, H., Sun, S., Lu, J., Xu, J., Lv, X., Peng, Y.,Zhang, X., Wang, Y.& Xiang, G. High Curie Temperature Ferromagnetism and High Hole Mobility in Tensile Strained Mn-Doped SiGe Thin Films. Advanced Functional Materials 30, 2002513(2020).